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2. Measuring transducers of temperature
   For taking temperature in a wide range the different constructions of sensors and different semiconductor materials are used as basis for a pickoff on purpose to create thermo-resistors with high stability and small subject to influence of extraneous external influences /7,8/.
   By us for creation of measuring transformers of temperature the by volume dispersible germanium and also  tapes of germanium got on the worked out technology is used.
   A dispersible germanium is got on the basis of initial germanium of n -типа with specific resistance 15 Ohm·of cm by influence of high pressures and temperatures. As a result a dispersible germanium had a р-тип of conductivity with the high concentration of transmitters of current at a room temperature, that allows to suppose that acceptor levels are created by structural defects /6/.
   On a fig. 6 the schematic image of transformer of temperature  of pellicle germanium is shown. Sizes of pickoffs of transducers from the by volume germanium of 0.5х1.0х1.0 mm, pellicle 0.2х1.0х1. 0 mm. Electric resistance  at 300 K makes a size 1-10 Ohm, at 4.2 K approximately 50-100 kOhm. Sensitiveness at 4.2 K - 100-200 %/К. Currents of feed at 4.2 K - 1-10 mkA.
   On a fig. 7 characteristic temperature dependence of size of electric resistance of sensors is shown, on the basis of dispersible germanium, and on a fig. 8 dependence of size of error of taking temperature, arising up in the magnetic field due to the effect of magnetoresistance .

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