Semiconductor measuring transducers of deformation, temperature and magnetic-field for application in the conditions of radiation irradiation, wide range of temperatures and magnetic fields
V.A Belyakov, N.T.Gorbachuk, P.A.Didenko, E.A. Lamzin, etc. Semiconductor measuring converters of deformation, temperature and magnetic field for application in conditions of a radiating irradiation, wide range of temperatures and magnetic fields. Questions of the nuclear science and technics. A series: the electrophysical equipment. 3 (29), 2005. St. Petersburg, Russia.
Semiconductor materials possess a high sensitiveness to different external influences and at development on their basis of measuring transducers (sensors) of physical sizes /15/ aim to use such materials and construction of pickoff, that a transducer maximally reacted on a measureable parameter and scorned small on other. In connection with development of criogenics technique, atomic energy demand grows on transducers are capable of working in the range of temperatures from climatic to cryogenics, magnetic fields to 10 Тл and possessing radiation stability /1,4/.
In modern sensors of creation semiconductor material is used as a rule in a pellicle kind, advantages of which consist in possibilities of the use of integral technologies, creations of cerouss of transducers with identical descriptions, more subzero cost of the got pickoffs of and other
By us for creation of measuring transducers tapes of gaas are used on a semiinsulating gaas, tapes of polisilicon on linings from silicon, tapes of germanium on linings from a gaas, and also by volume dispersible germanium. Researches are conducted in the range of temperatures 4.2-400 К.
1. Measuring transducers of mechanical deformations
At measuring of mechanical deformations by means of single strain gauge in the wide range of temperatures, in the conditions of the difficultly tense states of object, in presence the magnetic fields, exactness of measuring considerably goes /down 2,3/. New possibilities in the increase of exactness of measuring are opened by the use of tapes on insulating bases, when a pickoff is formed as a certain microcircuit of crystallgraphicly by oriented, and the construction of transducers allows to remove transversal strainsensetivity /4,5/.
For creation of measuring transducers of mechanical deformation tapes of poly silicon n and р-type of conductivity are used, in thick 0.6 mkm and alloying levels a 10^17 - 5·10^19 cm^ - 3 . the Alloying admixture the coniferous forest served as for p -silicon.